Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

doi:10.1088/1674-1056/26/8/088702

Abstract

A mesa-type enhanced InGaAs/InAlAs multilayer heterostructure (MLHS) terahertz photoconductive antenna (PCA) at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAlAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAlAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.

Keywords: THz InGaAs/InAlAs MLHS photoconductive antenna

Received: 26 February 2017
Revised: 12 April 2017
Accepted manuscript online:

PACS:	87.50.U	(Millimeter/terahertz fields effects)
	73.21.Cd	(Superlattices)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund:

Project supported by the National Instrument Program of China (Grant No. 2012YQ140005), the National Key Basic Research Program of China (Grant Nos. 2013CB932904 and 2016YFB0402403), and the National Natural Science Foundation of China (Grant Nos. 61274125 and 61435012).

Corresponding Authors: Hai-Qiao Ni
E-mail: nihq@semi.ac.cn

About author: 0.1088/1674-1056/26/8/

Cite this article:

Jian-Xing Xu(徐建星), Jin-Lun Li(李金伦), Si-Hang Wei(魏思航), Ben Ma(马奔), Yi Zhang(张翼), Yu Zhang(张宇), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm 2017 Chin. Phys. B 26 088702

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Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

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