Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (8): 087501    DOI: 10.1088/1674-1056/26/8/087501
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices
Yan Cui(崔岩)1,2, Ling Yang(杨玲)1,2, Teng Gao(高腾)1,2, Bo Li(李博)1,2, Jia-Jun Luo(罗家俊)1,2
1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences, Beijing 100029, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn