Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

doi:10.1088/1674-1056/26/8/086202

Abstract

We demonstrate that the GaAs/AlGaAs nanowires (NWs) ensemble is fabricated into photo-detectors. Current-voltage (I-V) characteristics are measured on GaAs/AlGaAs core-shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0×10¹³ cm^-2 to 5.0×10¹⁴ cm^-2. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.

Keywords: radiation effect lifetime damage coefficient mobility damage coefficient radiation damage

Received: 22 March 2017
Revised: 16 April 2017
Accepted manuscript online:

PACS:	62.23.Hj	(Nanowires)
	61.72.-y	(Defects and impurities in crystals; microstructure)
	61.80.-x	(Physical radiation effects, radiation damage)
	61.80.Jh	(Ion radiation effects)

Corresponding Authors: Fa-Jun Li
E-mail: lifajun1201@gmail.com

About author: 0.1088/1674-1056/26/8/

Cite this article:

Li-Ying Tan(谭丽英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶) Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector 2017 Chin. Phys. B 26 086202

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Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

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