Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

doi:10.1088/1674-1056/26/7/078102

Abstract We report the growth of AlN epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The sources of trimethylaluminium (TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of AlN epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction (HRXRD) measurement showed that the full width at half maximum (FWHM) of the (0002) and (10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square (RMS) roughness was lower to 0.2 nm as tested by atomic force microscope (AFM). The growth process of AlN epilayers was discussed in terms of crystalline quality, surface morphology, and residual stress.

Keywords: pulsed metal organic chemical vapor deposition growth mode morphology crystalline quality

Received: 26 January 2017
Revised: 17 March 2017
Accepted manuscript online:

PACS:	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	81.10.Aj	(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No.2015AA016801) and Guangdong Provincial Scientific and Technologic Planning Program,China (Grant No.2014B010119002).

Corresponding Authors: Lianshan Wang
E-mail: ls-wang@semi.ac.cn

Cite this article:

Zesheng Ji(吉泽生), Lianshan Wang(汪连山), Guijuan Zhao(赵桂娟), Yulin Meng(孟钰淋), Fangzheng Li(李方政), Huijie Li(李辉杰), Shaoyan Yang(杨少延), Zhanguo Wang(王占国) Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 2017 Chin. Phys. B 26 078102

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Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

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