Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (7): 077303    DOI: 10.1088/1674-1056/26/7/077303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Analytical capacitance model for 14 nm FinFET considering dual-k spacer
Fang-Lin Zheng(郑芳林), Cheng-Sheng Liu(刘程晟), Jia-Qi Ren(任佳琪), Yan-Ling Shi(石艳玲), Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进)
Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn