Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (7): 077101    DOI: 10.1088/1674-1056/26/7/077101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials
Jing Yang(杨静)1, De-Gang Zhao(赵德刚)1,2, De-Sheng Jiang(江德生)1, Ping Chen(陈平)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Xiang Li(李翔)1, Wei Liu(刘炜)1, Feng Liang(梁锋)1, Li-Qun Zhang(张立群)3, Hui Yang(杨 辉)1,3, Wen-Jie Wang(王文杰)4, Mo Li(李沫)4
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
4 Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

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