Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

doi:10.1088/1674-1056/26/5/058102

Abstract

A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high temperature (HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra (XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm²/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10⁵Ω·cm and 76.300 cm²/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B-S doping were acquired.

Keywords: large single crystal diamond high pressure and high temperature doping electrical property

Received: 10 December 2016
Revised: 05 February 2017
Accepted manuscript online:

PACS:	81.05.ug	(Diamond)
	07.35.+k	(High-pressure apparatus; shock tubes; diamond anvil cells)
	61.72.U-	(Doping and impurity implantation)
	73.61.-r	(Electrical properties of specific thin films)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11604246), China Postdoctor Science Foundation (Grant No. 2016M592714), Professional Practice Demonstration Base for Professional Degree Graduate in Material Engineering of Henan Polytechnic University, China (Grant No. 2016YJD03), the Education Department of Henan Province, China (Grant Nos. 12A430010 and 17A430020), and the Fundamental Research Funds for the Universities of Henan Province, China (Grant No. NSFRF140110).

Corresponding Authors: Shangsheng Li
E-mail: lishsh@hpu.edu.cn

Cite this article:

He Zhang(张贺), Shangsheng Li(李尚升), Taichao Su(宿太超), Meihua Hu(胡美华), Hongan Ma(马红安), Xiaopeng Jia(贾晓鹏), Yong Li(李勇) Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature 2017 Chin. Phys. B 26 058102

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Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

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