Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (3): 036804    DOI: 10.1088/1674-1056/26/3/036804
TOPICAL REVIEW---2D materials: physics and device applications Current Issue| Next Issue| Archive| Adv Search |
A review for compact model of graphene field-effect transistors
Nianduan Lu(卢年端)1,2,3, Lingfei Wang(汪令飞)1,3, Ling Li(李泠)1,2,3, Ming Liu(刘明)1,2,3
1 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail:
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: