A review for compact model of graphene field-effect transistors

doi:10.1088/1674-1056/26/3/036804

Abstract

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states (DOS), and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.

Keywords: two-dimensional material graphene field-effect transistor compact model

Received: 02 December 2016
Revised: 14 February 2017
Accepted manuscript online:

PACS:	68.35.bg	(Semiconductors)
	72.80.Vp	(Electronic transport in graphene)

Fund:

Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).

Corresponding Authors: Ling Li
E-mail: lingli@ime.ac.cn

Cite this article:

Nianduan Lu(卢年端), Lingfei Wang(汪令飞), Ling Li(李泠), Ming Liu(刘明) A review for compact model of graphene field-effect transistors 2017 Chin. Phys. B 26 036804

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A review for compact model of graphene field-effect transistors

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