Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (4): 047305    DOI: 10.1088/1674-1056/26/4/047305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
Hui Wang(王辉)1,2, Ning Wang(王宁)1,2, Ling-Li Jiang(蒋苓利)1,2, Xin-Peng Lin(林新鹏)1,2, Hai-Yue Zhao(赵海月)1,2, Hong-Yu Yu(于洪宇)1,2
1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 Shenzhen Key Laborary of the Third Generation Semiconductor, Shenzhen 518055, China

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