Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (4): 047201    DOI: 10.1088/1674-1056/26/4/047201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
Shaoyan Di(邸绍岩)1, Lei Shen(沈磊)1, Zhiyuan Lun(伦志远)1, Pengying Chang(常鹏鹰)1, Kai Zhao(赵凯)1,3, Tiao Lu(卢朓)2, Gang Du(杜刚)1, Xiaoyan Liu(刘晓彦)1
1 Institute of Microelectronics, Peking University, Beijing 100871, China;
2 CAPT, HEDPS, IFSA Collaborative Innovation Center of Ministry of Education, LMAM & School of Mathematical Sciences, Peking University, Beijing 100871, China;
3 School of Information and Communication, Beijing Information Science and Technology University, Beijing 100101, China

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