Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

doi:10.1088/1674-1056/26/4/047201

Abstract The performance of double gate GaSb nMOSFETs with surface orientations of (100) and (111) are compared by deterministically solving the time-dependent Boltzmann transport equation (BTE). Results show that the on-state current of the device with (111) surface orientation is almost three times larger than the (100) case due to the higher injection velocity. Moreover, the scattering rate of the (111) device is slightly lower than that of the (100) device.

Keywords: Boltzmann transport equation GaSb surface orientation double gate

Received: 28 November 2016
Revised: 20 January 2017
Accepted manuscript online:

PACS:	72.20.Dp	(General theory, scattering mechanisms)
	71.15.-m	(Methods of electronic structure calculations)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61404005).

Corresponding Authors: Kai Zhao, Xiaoyan Liu
E-mail: k.zhao.chn@gmail.com;xyliu@ime.pku.edu.cn

Cite this article:

Shaoyan Di(邸绍岩), Lei Shen(沈磊), Zhiyuan Lun(伦志远), Pengying Chang(常鹏鹰), Kai Zhao(赵凯), Tiao Lu(卢朓), Gang Du(杜刚), Xiaoyan Liu(刘晓彦) Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs 2017 Chin. Phys. B 26 047201

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Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

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