Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/26/3/037201

Abstract

In this study, a low-temperature annealed ohmic contact process was proposed on AlGaN/GaN heterostructure field effect transistors (HFETs) with the assistance of inductively coupled plasma (ICP) surface treatment. The effect of ICP treatment process on the 2DEG channel as well as the formation mechanism of the low annealing temperature ohmic contact was investigated. An appropriate residual AlGaN thickness and a plasma-induced damage are considered to contribute to the low-temperature annealed ohmic contact. By using a single Al layer to replace the conventional Ti/Al stacks, ohmic contact with a contact resistance of 0.35 Ω·mm was obtained when annealed at 575℃ for 3 min. Good ohmic contact was also obtained by annealing at 500℃ for 20 min.

Keywords: AlGaN/GaN HFET low-temperature ohmic contact inductively coupled plasma (ICP) surface treatment

Received: 26 October 2016
Revised: 23 December 2016
Accepted manuscript online:

PACS:	72.20.Dp	(General theory, scattering mechanisms)
	73.61.Ey	(III-V semiconductors)
	81.15.Cd	(Deposition by sputtering)
	81.65.Cf	(Surface cleaning, etching, patterning)

Corresponding Authors: Jin-Ping Ao, Liuan Li
E-mail: jpao@ee.tokushima-u.ac.jp;liliuan@mail.sysu.edu.cn

Cite this article:

Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平) Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors 2017 Chin. Phys. B 26 037201

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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

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