Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (3): 037104    DOI: 10.1088/1674-1056/26/3/037104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study
Wenbo Li(李文波)1, Ling Li(李玲)2, Fangfang Wang(王方方)2, Liu Zheng(郑柳)2, Jinghua Xia(夏经华)2, Fuwen Qin(秦福文)3, Xiaolin Wang(王晓琳)1, Yongping Li(李永平)2, Rui Liu(刘瑞)2, Dejun Wang(王德君)1, Yan Pan(潘艳)2, Fei Yang(杨霏)2,4
1 School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China;
2 Global Energy Interconnection Research Institute, Beijing 102211, China;
3 State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams(Ministry of Education), Dalian University of Technology, Dalian 116024, China;
4 State key Laboratory of Advanced Power Transmission Technology, Beijing 102211, China

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