Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (2): 027701    DOI: 10.1088/1674-1056/26/2/027701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition
Xue-Li Ma(马雪丽)1,3, Hong Yang(杨红)1,3, Jin-Juan Xiang(项金娟)1,3, Xiao-Lei Wang(王晓磊)1,3, Wen-Wu Wang(王文武)1,3, Jian-Qi Zhang(张建齐)2, Hua-Xiang Yin(殷华湘)1,3, Hui-Long Zhu(朱慧珑)1,3, Chao Zhao(赵 超)1,3
1 Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 National Center for Nanoscience and Technology, Beijing 100190, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

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