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Chin. Phys. B, 2017, Vol. 26(1): 018502    DOI: 10.1088/1674-1056/26/1/018502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Random telegraph noise on the threshold voltage of multi-level flash memory

Yiming Liao(廖轶明)1, Xiaoli Ji(纪小丽)1, Yue Xu(徐跃)3, Chengxu Zhang(张城绪)1, Qiang Guo(郭强)2, Feng Yan(闫锋)1
1. College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. Quality and Reliability Engineering, Wuhan Xinxin Semiconductor Manufacturing Company, Wuhan, China;
3. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Abstract  We investigate the impact of random telegraph noise (RTN) on the threshold voltage of multi-level NOR flash memory. It is found that the threshold voltage variation (ΔVth) and the distribution due to RTN increase with the programmed level (Vth) of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.
Keywords:  random telegraph noise      NOR flash memory      percolation path      oxide charges  
Received:  29 August 2016      Revised:  26 September 2016      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.40.Qx (Microcircuit quality, noise, performance, and failure analysis)  
Fund: Project supported by the National Research Program of China (Grant No. 2016YFB0400402), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20141321), and the National Natural Science Foundation of China (Grant No. 61627804).
Corresponding Authors:  Xiaoli Ji     E-mail:  xji@nju.edu.cn

Cite this article: 

Yiming Liao(廖轶明), Xiaoli Ji(纪小丽), Yue Xu(徐跃), Chengxu Zhang(张城绪), Qiang Guo(郭强), Feng Yan(闫锋) Random telegraph noise on the threshold voltage of multi-level flash memory 2017 Chin. Phys. B 26 018502

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