Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

doi:10.1088/1674-1056/26/2/028501

Abstract The latch-up effect induced by high-power microwave (HPM) in complementary metal-oxide-semiconductor (CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency (PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPM-induced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

Keywords: high-power microwave latch-up repetitive pulse frequency supply voltage dependence

Received: 30 June 2016
Revised: 07 November 2016
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K).

Corresponding Authors: Yu-Hang Zhang
E-mail: yhzhang0916@foxmail.com

Cite this article:

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾) Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter 2017 Chin. Phys. B 26 028501

[1]	Bäckström M G and Lövstrand K G 2004 IEEE T Electromagn. C 46 396
[2]	Iliadis A A and Kim K 2010 IEEE Trans. Dev. Mater. Reliab. 10 347
[3]	Nitsch D, Camp M, Sabath F, Haseborg J L and Garbe H 2004 IEEE T Electromagn. C 46 380
[4]	Bargstadt-Franke S, Stadler W, Esmark K, Streibl M, Domanski K, Gieser H, Wolf H and Bala W 2005 Mmicroelectron Reliab. 45 297
[5]	Wang H, Li J, Li H, Xiao K, and Chen H 2008 PIER 87 313
[6]	Yu X H, Chai C C, Liu Y, Yang Y T and Xi X W 2015 Chin. Phys. B 24 048502
[7]	Liu Y, Chai C C, Yang Y T, Sun J and Li Z P 2016 Chin. Phys. B 25 048504
[8]	Ma Z Y, Chai C C, Ren X R, Yang Y T and Chen B 2012 Acta Phys. Sin. 61 078501 (in Chinese)
[9]	Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Song K and Zhao Y B 2012 Chin. Phys. B 21 098502
[10]	Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B and Zhao Y B 2012 Chin. Phys. B 21 058502
[11]	Ma Z Y, Chai C C, Ren X R, Yang Y T, Zhao Y B and Qiao L P 2013 Chin. Phys. B 22 028502
[12]	Chai C C, Ma Z Y, Ren X R, Yang Y T, Zhao Y B and Yu X H 2013 Chin. Phys. B 22 068502
[13]	Kim K and Iliadis A A 2007 ISDRS, December 12-14, 2007, College Park, MD, USA, p. 1
[14]	Kim K and Iliadis A A 2008 Solod State Electron. 52 1589
[15]	Chen J and Du Z W 2013 Microelectron. Reliab. 53 371
[16]	Chen J and Du Z W 2013 Microelectron. Reliab. 53 1891
[17]	Yu X H, Chai C C, Ren X R, Yang Y T, Xi X W and Liu Y 2014 J. Semicond. 35 084011
[18]	Yu X H, Chai C C, Liu Y and Yang Y T 2015 China Inform Sci. 58 082402
[19]	Yu X H, Chai C C, Qiao L P, Yang Y T, Liu Y and Xi X W 2015 J. Semicond. 36 054011
[20]	Korte S, Camp M and Garbe H 2005 IEEE International Symposium on Electromagnetic Compatibility, August 8-12, 2005, Chicago, IL, USA, p. 489
[21]	Fang J Y, Liu G Z, Li P, Wang H J and Huang W H 1999 High Power Laser and Particle Beams 11 639 (in Chinese)

[1]	Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves Hui Li(李慧), Chang-Chun Chai(柴常春), Yu-Qian Liu(刘彧千), Han Wu(吴涵), Yin-Tang Yang(杨银堂). Chin. Phys. B, 2018, 27(8): 088502.
[2]	High holding voltage SCR for robust electrostatic discharge protection Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波). Chin. Phys. B, 2017, 26(7): 077304.
[3]	All-dielectric frequency selective surface design based on dielectric resonator Zheng-Bin Wang(王正斌), Chao Gao(高超), Bo Li(李波), Zhi-Hang Wu(吴知航), Hua-Mei Zhang(张华美), Ye-Rong Zhang (张业荣). Chin. Phys. B, 2016, 25(6): 068101.
[4]	Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application Ma Jin-Rong (马金荣), Qiao Ming (乔明), Zhang Bo (张波). Chin. Phys. B, 2015, 24(4): 047303.
[5]	Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up Chen Rui (陈睿), Han Jian-Wei (韩建伟), Zheng Han-Sheng (郑汉生), Yu Yong-Tao (余永涛), Shangguan Shi-Peng (上官士鹏), Feng Guo-Qiang (封国强), Ma Ying-Qi (马英起). Chin. Phys. B, 2015, 24(4): 046103.
[6]	Short-pulse high-power microwave breakdown at high pressures Zhao Peng-Cheng (赵朋程), Liao Cheng (廖成), Feng Ju (冯菊). Chin. Phys. B, 2015, 24(2): 025101.
[7]	Microwave damage susceptibility trend of bipolar transistor as a function of frequency Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Chen Bin (陈斌), Song Kun (宋坤), Zhao Ying-Bo (赵颖博). Chin. Phys. B, 2012, 21(9): 098502.
[8]	Investigation of an X-band magnetically insulated transmission line oscillator Fan Yu-Wei(樊玉伟), Zhong Hui-Huang(钟辉煌), Li Zhi-Qiang(李志强), Shu Ting(舒挺), Yang Han-Wu(杨汉武), Yang Jian-Hua(杨建华), Wang Yong(王勇), Luo Ling(罗玲), and Zhao Yan-Song(赵延宋). Chin. Phys. B, 2008, 17(5): 1804-1808.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

Cite this article:

Online attention