On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

doi:10.1088/1674-1056/26/2/027105

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Abstract In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current-voltage (I-V-T) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to -150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer. A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I-V curves is obtained.

Key words： homoepitaxial GaN Schottky contact leakage current tunneling dislocations ideality factor

Received: 23 August 2016

PACS:	71.55.Eq	(III-V semiconductors)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	73.50.-h	(Electronic transport phenomena in thin films)

Corresponding Authors: Yong Lei

E-mail: leiyong@nuist.edu.cn

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	Yong Lei
	Jing Su
	Hong-Yan Wu
	Cui-Hong Yang
	Wei-Feng Rao

Cite this article:

Yong Lei,Jing Su,Hong-Yan Wu et al . On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases[J]. Chin. Phys. B, 2017, 26(2):027105.

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http://cpb.iphy.ac.cn/EN/10.1088/1674-1056/26/2/027105 OR http://cpb.iphy.ac.cn/EN/Y2017/V26/I2/27105

[1]	Chu R, Shen L, Fichtenbaum N, Brown D, Keller S and Mishra U K 2008 IEEE Electron Dev. Lett. 29 297
[2]	Lu W, Wang L Q, Gu S Y, Aplin D P R, Estrada D M, Yu P K L and Asbeck P M 2011 IEEE Trans. Electron Dev. 58 1986
[3]	Liu J, Hao Y, Feng Q, Wang C, Zhang J C and Guo L L 2007 Acta Phys. Sin. 56 3483 (in Chinese)
[4]	Wang Y Q, Alur S, Sharma Y, Tong F, Thapa R, Gartland P, Issacs-Smith T, Ahyi C, Williams J, Park M, Johnson M, Paskova T, Preble E A and Evans K R 2011 Semicond. Sci. Technol. 26 022002
[5]	Lei Y, Lu H, Cao D S, Chen D J, Zhang R and Zheng Y D 2013 Solid State Electron. 82 63
[6]	Hsu J W P, Manfra M J, Molnar R J, Heying B and Speck J S 2002 Appl. Phys. Lett. 81 79
[7]	Koley G, M. G. Spencer M G 2001 Appl. Phys. Lett. 78 2873
[8]	Kim B, Moon D, Joo K, Oh S, Lee Y K, Park Y, Nanishi Y and Yoon E 2014 Appl. Phys. Lett. 104 102101
[9]	Simpkins B S, Schaadt D M, Yu E T and Molnar R J 2002 J. Appl. Phys. 91 9924
[10]	Zhang H, Miller E J and Yu E T 2006 J. Appl. Phys. 99 023703
[11]	Witowski A M, Pakula K, Baranowski J M, Sadowski M L and Wyder P 1999 Appl. Phys. Lett. 75 4154
[12]	Mochizuki K, Terano A, Kaneda N, Mishima T, Ishigaki T and Tsuchiya T 2011 Appl. Phys. Express 4 024104
[13]	Suresh S, Balaji M, Ganesh V and Baskar K 2010 J. Alloys Compd. 506 615
[14]	Chu R, Suh C S, Wong M H, Fichtenbaum N, Brown D, McCarthy L, Keller S, Wu F, Speck J S and Mishra U K 2007 IEEE Electron Dev. Lett. 28 781
[15]	Reddy V R, Reddy S R and Rao P K 2010 Microelectron. Eng. 87 117
[16]	Liu F, Wang T, Shen B, Huang S, Lin F, Ma N, Xu F J, Wang P and Yao J Q 2009 Chin. Phys. B 18 1618
[17]	Lv Y, Lin Z, Zhang Y, Meng L, Luan C, Cao Z, Chen H and Wang Z 2011 Appl. Phys. Lett. 98 123512