Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (1): 017304    DOI: 10.1088/1674-1056/26/1/017304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
Ling Yang(杨凌)1,2, Xiao-Wei Zhou(周小伟)1,2, Xiao-Hua Ma(马晓华)1,2, Ling Lv(吕玲)1,2, Yan-Rong Cao(曹艳荣)4, Jin-Cheng Zhang(张进成)1,3, Yue Hao(郝跃)1,3
1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China;
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3. School of Microelectronics, Xidian University, Xi'an 710071, China;
4. School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China

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