Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate

doi:10.1088/1674-1056/25/12/128101

Abstract

This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si (001) substrate by metal-organic vapor-phase epitaxy. Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.

Keywords: phase modulation GaAs grooves Si

Received: 20 December 2015
Revised: 25 August 2016
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.05.Cy	(Elemental semiconductors)
	64.75.Qr	(Phase separation and segregation in semiconductors)

Fund:

Project supported by the National Science and Technology Major Project of Science and Technology of China (Grant No. 2011ZX02708) and the National Natural Science Foundation of China (Grant No. 61504137).

Corresponding Authors: Jiao-Qing Pan
E-mail: jqpan@semi.ac.cn

Cite this article:

Shi-Yan Li(李士颜), Xu-Liang Zhou(周旭亮), Xiang-Ting Kong(孔祥挺), Meng-Ke Li(李梦珂), Jun-Ping Mi(米俊萍), Meng-Qi Wang(王梦琦), Jiao-Qing Pan(潘教青) Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate 2016 Chin. Phys. B 25 128101

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Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate

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