Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (11): 118503    DOI: 10.1088/1674-1056/25/11/118503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures
Kai Lu(吕凯)1,3, Jing Chen(陈静)1, Yuping Huang(黄瑜萍)2, Jun Liu(刘军)2, Jiexin Luo(罗杰馨)1, Xi Wang(王曦)1
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
2 Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

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