| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors |
| Han-Han Lu(卢汉汉)1, Jing-Ping Xu(徐静平)1, Lu Liu(刘璐)1, Pui-To Lai(黎沛涛)2, Wing-Man Tang(邓咏雯)3 |
1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China;
3 Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China |
|
|
|
|
Abstract An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive.
|
Received: 18 March 2016
Revised: 28 July 2016
Accepted manuscript online:
|
|
PACS:
|
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
85.30.Tv
|
(Field effect devices)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1). |
Corresponding Authors:
Lu Liu, Wing-Man Tang
E-mail: liulu@hust.edu.cn;laip@eee.hku.hk
|
Cite this article:
Han-Han Lu(卢汉汉), Jing-Ping Xu(徐静平), Lu Liu(刘璐), Pui-To Lai(黎沛涛), Wing-Man Tang(邓咏雯) Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors 2016 Chin. Phys. B 25 118502
|
| [1] |
Kim H S, Ok I, Zhang M, Zhu F, Park S, Yum J, Zhao H, Lee J C, Majhi P, Goel N, Tsai W, Gaspe C K and Santos M B 2008 Appl. Phys. Lett. 93 062111
|
| [2] |
Alian A, Brammertz G, Merckling C, Firrincieli A, Wang W E, Lin H C, Caymax M, Meuris M, Meyer K D and Heyns M 2011 Appl. Phys. Lett. 99 112114
|
| [3] |
Huang Y, Xu J P, Wang L S and Zhu S Y 2013 Acta Phys. Sin. 62 157201(in Chinese)
|
| [4] |
Chang H D, Sun B, Xue B Q, Liu G M, Zhao W, Wang S K and Liu H G 2013 Chin. Phys. B 22 077306
|
| [5] |
Chang Y C, Huang M L, Lee K Y, Lee Y J, Lin T D, Hong M, Kwo J, Lay T S, Liao C C and Cheng K Y 2008 Appl. Phys. Lett. 92 072901
|
| [6] |
Zadeh D H, Oomine H, Suzuki Y, Kakushima K, Ahmet P, Nohira H, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T and Iwai H 2013 Solid-State Electron. 82 29
|
| [7] |
Chobpattana V, Mates T E, Zhang J Y and Stemmer S 2014 Appl. Phys. Lett. 104 182912
|
| [8] |
Kanda T, Zadea D, Linc Y C, Kakushimab K, Ahmet P, Tsutsui K, Nishiyama A, Sugiib N, Chang E Y, Natori K, Hattori T and Iwai H 2011 ECS Trans. 34 483
|
| [9] |
Kim E J, Chagarov E, Cagnon J, Yuan Y, Kummel A C, Asbeck P M, Stemmer S, Saraswat K C and McIntyre P C 2009 J. Appl. Phys. 106 124508
|
| [10] |
Akazawa M and Hasegawa H 2010 Appl. Surf. Sci. 256 5708
|
| [11] |
Chang C Y, Yokoyama M, Kim S H, Ichikawa O, Osada T, Hata M, Takenaka M and Takagi S 2013 Microelectron. Eng. 109 28
|
| [12] |
Goel N, Majhi P, Chui C O, Tsai W, Choi D and Harris J S 2006 Appl. Phys. Lett. 89 163517
|
| [13] |
Nicollian E H and Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology
|
| [14] |
Shockley W and Read W T Jr 1952 Phys. Rev. 87 835
|
| [15] |
Heiman F P and Warfield G 1965 IEEE Trans. Electron Devices ED-12 167
|
| [16] |
Preier H 1967 Appl. Phys. Lett. 10 361
|
| [17] |
Mui D S L, Reed J, Biswas D and Morkoç H 1992 J. Appl. Phys. 72 553
|
| [18] |
Zhang C, Xu M, Ye P D and Li X 2013 IEEE Electron Device Lett. 34 735
|
| [19] |
Chen H P, Ahn J, McIntyre P C and Taur Y 2013 IEEE Trans. Electron Devices 60 3920
|
| [20] |
Taur Y, Chen H P, Yuan Y and Yu B 2013 IEEE Electron Device Lett. 34 1343
|
| [21] |
Pintilie I, Teodorescu C M, Moscatelli F, Nipoti R, Poggi A, Solmi S, Lovlie L S and Svensson B G 2010 J. Appl. Phys. 108 024503
|
| [22] |
Filip L D, Pintilie I, Nistor L C and Svensson B G 2013 Thin Solid Films 545 22
|
| [23] |
Yuan Y, Yu B, Ahn J, McIntyre P C, Asbeck P M, Rodwell M J W and Taur Y 2012 IEEE Trans. Electron Dev. 59 2100
|
| [24] |
Yuan Y, Wang L,Yu B, Shin B, Ahn J, McIntyre P C, Asbeck P M, Rodwell M J W and Taur Y 2011 IEEE Electron Device Lett. 32 485
|
| [25] |
Polyanin A D and Zaitsev V F 2003 Handbook of Exact Solutions for Ordinary Differential Equations (Boca Raton, FL:CRC Press)
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
