Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (11): 118501    DOI: 10.1088/1674-1056/25/11/118501
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Analytical threshold voltage model for strained silicon GAA-TFET
Hai-Yan Kang(康海燕), Hui-Yong Hu(胡辉勇), Bin Wang(王斌)
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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