Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

doi:10.1088/1674-1056/25/11/118401

Abstract In this paper, ground-signal-ground type through-silicon vias (TSVs) exploiting air gaps as insulation layers are designed, analyzed and simulated for applications in millimeter wave. The compact wideband equivalent-circuit model and passive elements (RLGC) parameters based on the physical parameters are presented with the frequency up to 100 GHz. The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm. Therefore, the applied voltage of TSVs only needs to achieve the flatband voltage, and there is no need to indicate the threshold voltage. This is due to the small permittivity of air gaps. The proposed model shows good agreement with the simulation results of ADS and Ansoft's HFSS over a wide frequency range.

Keywords: three-dimensional integrated circuits through-silicon vias air gaps high frequency

Received: 23 May 2016
Revised: 30 June 2016
Accepted manuscript online:

PACS:	84.30.-r	(Electronic circuits)
	84.30.Bv	(Circuit theory)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the National Natural Science Foundation of China (Grant Nos. 61376039, 61334003, 61574104, and 61474088).

Corresponding Authors: Zhangming Zhu
E-mail: zmyh@263.net

Cite this article:

Xiaoxian Liu(刘晓贤), Zhangming Zhu(朱樟明), Yintang Yang(杨银堂), Ruixue Ding(丁瑞雪), Yuejin Li(李跃进) Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits 2016 Chin. Phys. B 25 118401

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Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

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