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Chin. Phys. B, 2016, Vol. 25(11): 117313    DOI: 10.1088/1674-1056/25/11/117313
Special Issue: TOPICAL REVIEW — Topological electronic states
TOPICAL REVIEW—Topological electronic states Prev   Next  

Electronic properties of SnTe-class topological crystalline insulator materials

Jianfeng Wang(王建峰)1, Na Wang(王娜)1, Huaqing Huang(黄华卿)1, Wenhui Duan(段文晖)1,2,3
1 Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China;
2 Institute for Advanced Study, Tsinghua University, Beijing 100084, China;
3 Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
Abstract  

The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations, and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.

Keywords:  topological crystalline insulator      SnTe      surface states      mirror symmetry  
Received:  19 April 2016      Revised:  11 July 2016      Accepted manuscript online: 
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  73.22.-f (Electronic structure of nanoscale materials and related systems)  
  71.20.-b (Electron density of states and band structure of crystalline solids)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
Fund: 

Project supported by the Ministry of Science and Technology of China (Grant No. 2016YFA0301000) and the National Natural Science Foundation of China (Grant No. 11334006).

Corresponding Authors:  Wenhui Duan     E-mail:  dwh@phys.tsinghua.edu.cn

Cite this article: 

Jianfeng Wang(王建峰), Na Wang(王娜), Huaqing Huang(黄华卿), Wenhui Duan(段文晖) Electronic properties of SnTe-class topological crystalline insulator materials 2016 Chin. Phys. B 25 117313

[1] Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045
[2] Qi X L and Zhang S C 2011 Rev. Mod. Phys. 83 1057
[3] Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 146802
[4] Bernevig B A, Hughes T L and Zhang S C 2006 Science 314 1757
[5] Klitzing K v, Dorda G and Pepper M 1980 Phys. Rev. Lett. 45 494
[6] Thouless D J, Kohmoto M, Nightingale M P and den Nijs M 1982 Phys. Rev. Lett. 49 405
[7] Moore J E and Balents L 2007 Phys. Rev. B 75 121306
[8] Fu L, Kane C L and Mele E J 2007 Phys. Rev. Lett. 98 106803
[9] Fu L and Kane C L 2007 Phys. Rev. B 76 045302
[10] Yu R, Zhang W, Zhang H J, Zhang S C, Dai X and Fang Z 2010 Science 329 61
[11] Chang C Z, Zhang J, Feng X, Shen J, Zhang Z, Guo M, Li K, Ou Y, Wei P, Wang L L, Ji Z Q, Feng Y, Ji S, Chen X, Jia J, Dai X, Fang Z, Zhang S C, He K, Wang Y, Lu L, Ma X C and Xue Q K 2013 Science 340 167
[12] Fu L and Kane C L 2008 Phys. Rev. Lett. 100 096407
[13] König M, Wiedmann S, Brüne C, Roth A, Buhmann H, Molenkamp L W, Qi X L and Zhang S C 2007 Science 318 766
[14] Liu C, Hughes T L, Qi X L, Wang K and Zhang S C 2008 Phys. Rev. Lett. 100 236601
[15] Knez I, Du R R and Sullivan G 2011 Phys. Rev. Lett. 107 136603
[16] Liu C C, Feng W and Yao Y 2011 Phys. Rev. Lett. 107 076802
[17] Liu C C, Jiang H and Yao Y 2011 Phys. Rev. B 84 195430
[18] Xu Y, Yan B, Zhang H J, Wang J, Xu G, Tang P, Duan W and Zhang S C 2013 Phys. Rev. Lett. 111 136804
[19] Tang P, Chen P, Cao W, Huang H, Cahangirov S, Xian L, Xu Y, Zhang S C, Duan W and Rubio A 2014 Phys. Rev. B 90 121408
[20] Si C, Liu J, Xu Y, Wu J, Gu B L and Duan W 2014 Phys. Rev. B 89 115429
[21] Liu Z, Liu C X, Wu Y S, Duan W H, Liu F and Wu J 2011 Phys. Rev. Lett. 107 136805
[22] Wada M, Murakami S, Freimuth F and Bihlmayer G 2011 Phys. Rev. B 83 121310
[23] Hsieh D, Qian D, Wray L, Xia Y, Hor Y S, Cava R and Hasan M Z 2008 Nature 452 970
[24] Zhang H, Liu C X, Qi X L, Dai X, Fang Z and Zhang S C 2009 Nat. Phys. 5 438
[25] Chen Y L, Analytis J G, Chu J H, Liu Z K, Mo S K, Qi X L, Zhang H J, Lu D H, Dai X, Fang Z, Zhang S C, Fisher I R, Hussain Z and Shen Z X 2009 Science 325 178
[26] Xia Y, Qian D, Hsieh D, Wray L, Pal A, Lin H, Bansil A, Grauer D, Hor Y S, Cava R J and Hasan M Z 2009 Nat. Phys. 5 398
[27] Chadov S, Qi X, Kübler J, Fecher G H, Felser C and Zhang S C 2010 Nat. Mater. 9 541
[28] Lin H, Wray L A, Xia Y, Xu S, Jia S, Cava R J, Bansil A and Hasan M Z 2010 Nat. Mater. 9 546
[29] Sato T, Segawa K, Guo H, Sugawara K, Souma S, Takahashi T and Ando Y 2010 Phys. Rev. Lett. 105 136802
[30] Kuroda K, Ye M, Kimura A, Eremeev S V, Krasovskii E E, Chulkov E V, Ueda Y, Miyamoto K, Okuda T, Shimada K, Namatame H and Taniguchi M 2010 Phys. Rev. Lett. 105 146801
[31] Chen Y L, Liu Z K, Analytis J G, Chu J H, Zhang H J, Yan B H, Mo S K, Moore R G, Lu D H, Fisher I R, Zhang S C, Hussain Z and Shen Z X 2010 Phys. Rev. Lett. 105 266401
[32] Brüne C, Liu C, Novik E, Hankiewicz E, Buhmann H, Chen Y, Qi X, Shen Z, Zhang S and Molenkamp L 2011 Phys. Rev. Lett. 106 126803
[33] Barfuss A, Dudy L, Scholz M R, Roth H, Höpfner P, Blumenstein C, Landolt G, Dil J H, Plumb N C, Radovic M, Bostwick A, Rotenberg E, Fleszar A, Bihlmayer G, Wortmann D, Li G, Hanke W, Claessen R and Schäfer J 2013 Phys. Rev. Lett. 111 157205
[34] Huang H, Liu J and Duan W 2014 Phys. Rev. B 90 195105
[35] Autés G, Isaeva A, Moreschini L, Johannsen J C, Pisoni A, Mori R, Zhang W, Filatova T G, Kuznetsov A N, Forrò L, Broek W V, Kim Y, Kim K S, Lanzara A, Denlinger J D, Rotenberg E, Bostwick A, Grioni M and Yazyev O V 2016 Nat. mater. 15 154
[36] Huang H and Duan W 2016 Nat. Mater. 15 129
[37] Bansil A, Lin H and Das T 2016 Rev. Mod. Phys. 88 021004
[38] Liu J, Xu Y, Wu J, Gu B L, Zhang S B and Duan W 2014 Acta Cryst. C 70 118
[39] Shi W J, Liu J, Xu Y, Xiong S J, Wu J and Duan W 2015 Phys. Rev. B 92 205118
[40] Chiu C K, Teo J C, Schnyder A P and Ryu S 2016 Rev. Mod. Phys. 88 035005
[50] Slager R J, Mesaros A, Juričić V and Zaanen J 2013 Nat. Phys. 9 98
[41] Fu L 2011 Phys. Rev. Lett. 106 106802
[42] Hsieh T H, Lin H, Liu J, Duan W, Bansil A and Fu L 2012 Nat. Commun. 3 982
[43] Tanaka Y, Ren Z, Sato T, Nakayama K, Souma S, Takahashi T, Segawa K and Ando Y 2012 Nat. Phys. 8 800
[44] Dziawa P, Kowalski B J, Dybko K, Buczko R, Szczerbakow A, Szot M, Lusakowska E, Balasubramanian T, Wojek B M, Berntsen M H, Tjernberg O and Story T 2012 Nat. Mater. 11 1023
[45] Xu S Y, Liu C, Alidoust N, Neupane M, Qian D, Belopolski I, Denlinger J D, Wang Y J, Lin H, Wray L A, Landolt G, Slomski B, Dil J H, Marcinkova A, Morosan E, Gibson Q, Sankar R, Chou F C, Cava R J, Bansil A and Hasan M Z 2012 Nat. Commun. 3 1192
[46] Kargarian M and Fiete G A 2013 Phys. Rev. Lett. 110 156403
[47] Hsieh T H, Liu J and Fu L 2014 Phys. Rev. B 90 081112
[48] Liu C X, Zhang R X and VanLeeuwen B K 2014 Phys. Rev. B 90 085304
[49] Jadaun P, Xiao D, Niu Q and Banerjee S K 2013 Phys. Rev. B 88 085110
[51] Dong X Y and Liu C X 2016 Phys. Rev. B 93 045429
[52] Sheng D, Weng Z, Sheng L and Haldane F 2006 Phys. Rev. Lett. 97 036808
[53] Teo J C, Fu L and Kane C 2008 Phys. Rev. B 78 045426
[54] Ando Y and Fu L 2015 Annu. Rev. Condens. Matter Phys. 6 361
[55] Liu J, Duan W and Fu L 2013 Phys. Rev. B 88 241303
[56] Tanaka Y, Shoman T, Nakayama K, Souma S, Sato T, Takahashi T, Novak M, Segawa K and Ando Y 2013 Phys. Rev. B 88 235126
[57] Wang Y J, Tsai W F, Lin H, Xu S Y, Neupane M, Hasan M Z and Bansil A 2013 Phys. Rev. B 87 235317
[58] Okada Y, Serbyn M, Lin H, Walkup D, Zhou W, Dhital C, Neupane M, Xu S, Wang Y J, Sankar R, Chou F, Bansil A, Hasan M Z, Wilson S D, Fu L and Madhavan V 2013 Science 341 1496
[59] Tasker P W 1979 J. Phys. C 12 4977
[60] Wang J, Liu J, Xu Y, Wu J, Gu B L and Duan W 2014 Phys. Rev. B 89 125308
[61] Yan C, Liu J, Zang Y, Wang J, Wang Z, Wang P, Zhang Z D, Wang L, Ma X, Ji S, He K, Fu L, Duan W, Xue Q K and Chen X 2014 Phys. Rev. Lett. 112 186801
[62] Polley C M, Dziawa P, Reszka A, Szczerbakow A, Minikayev R, Domagala J Z, Safaei S, Kacman P, Buczko R, Adell J, Berntsen M H, Wojek B M, Tjernberg O, Kowalski B J, Story T and Balasubramanian T 2014 Phys. Rev. B 89 075317
[63] Wang Z, Wang J, Zang Y, Zhang Q, Shi J A, Jiang T, Gong Y, Song C L, Ji S H, Wang L L, Gu L, He K, Duan W, Ma X, Chen X and Xue Q K 2015 Adv. Mater. 27 4150
[64] Wang N, West D, Liu J, Li J, Yan Q, Gu B L, Zhang S B and Duan W 2014 Phys. Rev. B 89 045142
[65] Fang C, Gilbert M J and Bernevig B A 2014 Phys. Rev. Lett. 112 046801
[66] Inoue M, Oshima H, Morisaki M, Yagi H, Fun H K and Tatsukawa T 1981 J. Phys. Soc. Jpn. 50 1222
[67] Story T, Galazka R R, Frankel R B and Wolff P A 1986 Phys. Rev. Lett. 56 777
[68] Liu Y, Bose S and Kudrnovský J 2013 J. Appl. Phys. 114 213704
[69] Wang N, Wang J F, Si C, Gu B L and Duan W H 2016 Sci. China-Phys. Mech. Astron. 59 680012
[70] Erickson A, Chu J H, Toney M, Geballe T and Fisher I 2009 Phys. Rev. B 79 024520
[71] Sasaki S, Ren Z, Taskin A, Segawa K, Fu L and Ando Y 2012 Phys. Rev. Lett. 109 217004
[72] Sato T, Tanaka Y, Nakayama K, Souma S, Takahashi T, Sasaki S, Ren Z, Taskin A, Segawa K and Ando Y 2013 Phys. Rev. Lett. 110 206804
[73] Novak M, Sasaki S, Kriener M, Segawa K and Ando Y 2013 Phys. Rev. B 88 140502
[74] Zhong R, Schneeloch J, Shi X, Xu Z, Zhang C, Tranquada J, Li Q and Gu G 2013 Phys. Rev. B 88 020505
[75] Polley C M, Jovic V, Su T Y, Saghir M, Newby D J, Kowalski B J, Jakiela R, Barcz A, Guziewicz M, Balasubramanian T, Balakrishnan G, Laverock J and Smith K E 2016 Phys. Rev. B 93 075132
[76] Haldolaarachchige N, Gibson Q, Xie W, Nielsen M B, Kushwaha S and Cava R J 2016 Phys. Rev. B 93 024520
[77] Si C, Sun Z and Liu F 2016 Nanoscale 8 3207
[78] Young S M, Chowdhury S, Walter E J, Mele E J, Kane C L and Rappe A M 2011 Phys. Rev. B 84 085106
[79] Liu W, Peng X, Tang C, Sun L, Zhang K and Zhong J 2011 Phys. Rev. B 84 245105
[80] Barone P, Rauch T, Sante D D, Henk J, Mertig I and Picozzi S 2013 Phys. Rev. B 88 045207
[81] Barone P, Sante D D and Picozzi S 2013 Phys. Status Solidi-R 7 1102
[82] Sun Y, Zhong Z, Shirakawa T, Franchini C, Li D, Li Y, Yunoki S and Chen X Q 2013 Phys. Rev. B 88 235122
[83] Qian X, Fu L and Li J 2014 Nano Res. 8 967
[84] Zhao L, Wang J, Gu B L and Duan W 2015 Phys. Rev. B 91 195320
[85] Tang E and Fu L 2014 Nat. Phys. 10 964
[86] Zeljkovic I, Walkup D, Assaf B A, Scipioni K L, Sankar R, Chou F and Madhavan V 2015 Nat. Nanotechnol. 10 849
[87] Zhao L, Liu J, Tang P and Duan W 2012 Appl. Phys. Lett. 100 131602
[88] Liu J, Hsieh T H, Wei P, Duan W, Moodera J and Fu L 2014 Nat. Mater. 13 178
[89] Yang G, Liu J, Fu L, Duan W and Liu C 2014 Phys. Rev. B 89 085312
[90] Liu J and Fu L 2015 Phys. Rev. B 91 081407
[91] Safaei S, Galicka M, Kacman P and Buczko R 2015 New J. Phys. 17 063041
[92] Linder J, Yokoyama T and Sudbo A 2009 Phys. Rev. B 80 205401
[93] Liu C X, Zhang H, Yan B, Qi X L, Frauenheim T, Dai X, Fang Z and Zhang S C 2010 Phys. Rev. B 81 041307
[94] Lu H Z, Shan W Y, Yao W, Niu Q and Shen S Q 2010 Phys. Rev. B 81 115407
[95] Zhao L, Wang J, Liu J, Xu Y, Gu B L, Xue Q K and Duan W 2015 Phys. Rev. B 92 041408
[96] Zhao L, Tang P, Gu B L and Duan W 2013 Phys. Rev. Lett. 111 116601
[97] Young S M, Zaheer S, Teo J C, Kane C L, Mele E J and Rappe A M 2012 Phys. Rev. Lett. 108 140405
[98] Wang Z, Sun Y, Chen X Q, Franchini C, Xu G, Weng H, Dai X and Fang Z 2012 Phys. Rev. B 85 195320
[99] Liu Z K, Zhou B, Zhang Y, Wang Z J, Weng H M, Prabhakaran D, Mo S K, Shen Z X, Fang Z, Dai X, Hussain Z and Chen Y L 2014 Science 343 864
[100] Wang Z, Weng H, Wu Q, Dai X and Fang Z 2013 Phys. Rev. B 88 125427
[101] Liu Z K, Jiang J, Zhou B, Wang Z J, Zhang Y, Weng H M, Prabhakaran D, Mo S K, Peng H, Dudin P, Kim T, Hoesch M, Fang Z, Dai X, Shen Z X, Feng D L, Hussain Z and Chen Y L 2014 Nat. Mater. 13 677
[102] Weng H, Dai X and Fang Z 2016 J. Phys.-Condens. Mat. 28 303001
[103] Kim Y, Wieder B J, Kane C L and Rappe A M 2015 Phys. Rev. Lett. 115 036806
[104] Burkov A, Hook M and Balents L 2011 Phys. Rev. B 84 235126
[105] Bian G, Chang T R, Sankar R, Xu S Y, Zheng H, Neupert T, Chiu C K, Huang S M, Chang G, Belopolski I, Sanchez D S, Neupane M, Alidoust N, Liu C, Wang B K, Lee C C, Jeng H T, Zhang C, Yuan Z, Jia S, Bansil A, Chou F, Lin H and Hasan M Z 2016 Nat. Commun. 7 10556
[106] Bian G, Chang T R, Zheng H, Velury S, Xu S Y, Neupert T, Chiu C K, Huang S M, Sanchez D S, Belopolski I, Alidoust N, Chen P J, Chang G, Bansil A, Jeng H T, Lin H and Hasan M Z 2016 Phys. Rev. B 93 121113
[107] Hosur P and Qi X 2013 Comp. Rend. Phys. 14 857
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