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Chin. Phys. B, 2016, Vol. 25(11): 117306    DOI: 10.1088/1674-1056/25/11/117306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Charge transport and bipolar switching mechanismin a Cu/HfO2/Pt resistive switching cell

Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂)
State Key Lab of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
Abstract  Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO2/Pt structure in the application of resistive random access memory (RRAM). The conduction mechanism of the structure is characterized to be SCLC conduction. The dependence of resistances in both high resistance state (HRS) and low resistance state (LRS) on the temperature and device area are studied. Then, the composition and chemical bonding state of Cu and Hf at Cu/HfO2 interface region are analyzed by x-ray photoelectron spectroscopy (XPS). Combining the electrical characteristics and the chemical structure at the interface, a model for the resistive switching effect in Cu/HfO2/Pt stack is proposed. According to this model, the generation and recovery of oxygen vacancies in the HfO2 film are responsible for the resistance change.
Keywords:  HfO2 film      resistive switching mechanism      chemical structure  
Received:  23 February 2016      Revised:  17 August 2016      Accepted manuscript online: 
PACS:  73.40.Rw (Metal-insulator-metal structures)  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
Fund: Project supported by the Research Fund of the State Key Laboratory of Solidification Processing (NWPU), China (Grant No. 155-QP-2016), the Fundamental Research Funds for the Central Universities of China (Grant No. 3102014JCQ01032), and the 111 Project of China (Grant No. B08040).
Corresponding Authors:  Tingting Tan     E-mail:  tantt@nwpu.edu.cn

Cite this article: 

Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂) Charge transport and bipolar switching mechanismin a Cu/HfO2/Pt resistive switching cell 2016 Chin. Phys. B 25 117306

[1] Waser R and Aono M 2007 Nat. Mater. 6 833
[2] Lei X, Liu H, Gao H, Yang H, Wang G, Long S, Ma X and Liu M 2014 Chin. Phys. B 23 117305
[3] Kuzum D, Yu S and Wong H 2013 Nanotechnol. 24 382001
[4] Luo W C, Hou T H, Lin K L, Lee Y J and Lei T F 2013 Solid-State Electron. 89 167
[5] Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632
[6] Valov I, Waser R, Jameson J R and Kozicki M N 2011 Nanotechnol. 22 254003
[7] Bersuker G, Gilmer D C, Veksler D, Kirsch P, Vandelli L and Padovani A 2011 J. Appl. Phys. 110 124518
[8] Yu Y, Matveyev A, MarkeevA M, Lebedinskii Y Y, Chouprik A A, Egorov K V, Drube W and Zenkevich A V 2014 Thin Solid Films 563 20
[9] Liu Q, Guan W H, Long S B, Jia R, Liu M and Chen J N 2008 Appl. Phys. Lett. 92 012117
[10] Walczyk C, Walcayk D, Schroeder T, Bertaud T, Sowińska M, Lukosius M, Fraschke M, Wolansky D, Tillack B, Miranda E and Wenger C 2011 IEEE Trans. Electron Dev. 58 3124
[11] Panzner G, Egert B and Schmidt H P 1985 Surf. Sci. 151 400
[12] Nagata T, Haemori M, Yamashita Y, Yoshikawa H, IwashitaY, Kobayashi K and Chikyow T 2011 Appl. Phys. Lett. 99 223517
[13] Pang H and Ning D 2014 Chin. Phys. Lett. 31 107303
[14] Renault O, Samour D, Damlencourt J F, Blin D, Martin F, Marthon S, Barrett N T and Besson P 2002 Appl. Phys. Lett. 81 3627
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