Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

doi:10.1088/1674-1056/25/11/117305

Abstract In this paper, the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated. Scanning electron microscope/energy dispersive spectrometer (SEM/EDS) method and x-ray photoelectron spectroscopy (XPS) method were used to confirm the formation of oxides. Based on the experimental results, the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V, a high peak transconductance of 210 mS/mm, and a maximum drain current of 610 mA/mm at the gate bias of 4 V. Meanwhile, the on/off current ratio of enhancement-mode HEMT was as high as 10⁸, drain induced barrier lowering (DIBL) was as low as 5 mV/V, and subthreshold swing (SS) of 80 mV/decade was obtained. Compared with the conventional HEMT, the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower, and the off-state breakdown voltage of which was higher. In addition, a power gain cutoff frequency (f_max) of the enhancement-mode HEMT was larger than that of the conventional one.

Keywords: AlGaN/GaN high electron mobility transistors recessed-gate oxygen plasma

Received: 15 June 2016
Revised: 17 August 2016
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	81.05.Ea	(III-V semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574110, 61334002, and 61474091) and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2015AA016801).

Corresponding Authors: Chong Wang
E-mail: chongw@xidian.edu.cn

Cite this article:

Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment 2016 Chin. Phys. B 25 117305

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Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

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