| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire |
| M Munguía-Rodríguez1, Ri Betancourt-Riera2, Re Betancourt-Riera2, R Riera1, J M Nieto Jalil3 |
1 Departamento de Investigación en Física, Universidad de Sonora, Apartado Postal 5-88, 83190, Hermosillo, Sonora, México;
2 Instituto Tecnólogico de Hermosillo. Avenida Tecnol ógico S/N, Col. Sahuaro, 83170, Hermosillo, Sonora, México;
3 Tecnológico de Monterrey-Campus Sonora Norte. Bulevar Enrique Mazón López No.965, 83000, Hermosillo, Sonora, México |
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Abstract The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T=0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.
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Received: 02 June 2016
Revised: 20 July 2016
Accepted manuscript online:
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PACS:
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73.21.Hb
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(Quantum wires)
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78.67.Lt
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(Quantum wires)
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Corresponding Authors:
Re Betancourt-Riera
E-mail: rbriera@gmail.com
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Cite this article:
M Munguía-Rodríguez, Ri Betancourt-Riera, Re Betancourt-Riera, R Riera, J M Nieto Jalil Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire 2016 Chin. Phys. B 25 117302
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