Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (10): 108801    DOI: 10.1088/1674-1056/25/10/108801
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers
Lin Lu(鲁麟)1,2, Ming-Chao Li(李明潮)1,2, Chen Lv(吕琛)2, Wen-Gen Gao(高文根)1,2, Ming Jiang(江明)1,2, Fu-Jun Xu(许福军)3, Qi-Gong Chen(陈其工)1,2
1 Anhui Key Laboratory of Detection Technology and Energy Saving Devices, Anhui Polytechnic University, Wuhu 241000, China;
2 College of Electrical Engineering, Anhui Polytechnic University, Wuhu 241000, China;
3 Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing 100871, China

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