A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

doi:10.1088/1674-1056/25/10/108503

Abstract In the present work, a two-dimensional(2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using two-dimensional (2D) ATLAS^TM device simulator to affirm and formalize the proposed device structure.

Keywords: triple material symmetrical gate stack (TMGS) DG MOSFET gate stack short channel effect drain induced barrier lowering threshold voltage

Received: 12 May 2016
Revised: 17 June 2016
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.-z	(Semiconductor devices)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	12.39.Pn	(Potential models)

Corresponding Authors: Shweta Tripathi
E-mail: shtri@mnnit.ac.in

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Shweta Tripathi A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET 2016 Chin. Phys. B 25 108503

[1]	Wong H 2012 Nano-CMOS Gate Dielectric Engineering (New York: CRC Press) pp. 1-6
[2]	Maiti CK and Maiti TK 2013 Strain-Engineered MOSFETs (New York: CRC Press) pp. 1-7
[3]	Ishimaru, V 2008 Solid-State Electron. 52 1266
[4]	International Technology Roadmap for semiconductors 2007
[5]	Agrawal B 1994 Ph. D. Dissertation, Rensselare polytech. Inst. Troy, New York
[6]	Chaudhry A and Kumar M J 2004 IEEE Transactions 4 99
[7]	Chenming Hu 1996 International Conference on Electron Devices Meeting (IEDM 96), pp. 319-322
[8]	Goel K, Saxena M, Gupta M and Gupta RS 2006 IEEE Trans. Electron Dev. 53 1623
[9]	Razavi P and Orouji A A D 2008 Electronics Conference 11th International Biennial Baltic 83 6
[10]	Chaves F A, Jimenez D, Ruiz F J, Godoy A and Suñé J 2012 IEEE Trans. Electron Dev. 59 2589
[11]	Abdi M A, Djeffal F, Meguellati M and Arar D 2009 16th IEEE International Conference on Electronics, Circuits, and Systems Proceedings, December 13, 2009 pp. 892-895
[12]	Razavi P and Orouji A A 2008 International Conference on Advances in Electronics and Micro-electronics (ENICS'08) pp. 11-14
[13]	Pradhan K P, Mohapatra S K, Agarwal P K, Sahu P K, Behera D K and Mishra J 2013 Microelectronics and Solid State Electronics 2 1
[14]	Alamgir M I, Gulib A U, Ahmed K M and Farzana E 2012 International Journal of Technology Enhancements and Emerging Engineering Research 1 96
[15]	Li J, Liu H X, Li B, Gao L and Yuan B 2010 Chin. Phys. 19 107301
[16]	Solomon P M, et al. 2003 IEEE Circuits and Devices Magazine 19 48
[17]	Dao-Ming K, Qi L, Jun-Ning C, Shan G and Lei L 2006 ICSICT 06, Shanghai, China
[18]	Young K K 1989 IEEE Trans. Electron Dev. 36 399
[19]	Oh S H, Monroe D and Hergenrother J M 2000 IEEE Electron Dev. Lett. 21 445
[20]	Diagne B, Prégaldiny F, Lallement C, Sallese J M and Krummenacher F 2008 Solid-State Electron. 52 99
[21]	Chen Q, Agrawal B and Meindl J D 2002 IEEE Trans. Electron Dev. 49 1086
[22]	Tsormpatzoglou A, Dimitriadis C A, Clerc R, Pananakakis G and Ghibaudo G 2008 IEEE Trans. Electron Dev. 55 2512
[23]	El Hamid H A, Iñíguez B and Guitart J R 2007 IEEE Trans. Anal. Electron Dev. 54 572
[24]	Lundstrom M 1997 IEEE Electron Dev. Lett. 18 361
[25]	Jankovic N D and Armstrong G A 2004 Microelectron. J. 35 647
[26]	Dubey S, Tiwari P K and Jit S 2010 J. Appl. Phys. 108 034518

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A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

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