Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (10): 108502    DOI: 10.1088/1674-1056/25/10/108502
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Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-yAs heterojunction tunneling field-effect transistors
Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非)
Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China

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