Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (10): 108501    DOI: 10.1088/1674-1056/25/10/108501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
Shu-Xiang Sun(孙树祥)1, Hui-Fang Ji(吉慧芳)1, Hui-Juan Yao(姚会娟)1, Sheng Li(李胜)1, Zhi Jin(金智)2, Peng Ding(丁芃)2, Ying-Hui Zhong(钟英辉)1
1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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