Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (10): 107803    DOI: 10.1088/1674-1056/25/10/107803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
Liang Qiao(乔良)1,2, Zi-Guang Ma(马紫光)2, Hong Chen(陈弘)2, Hai-Yan Wu(吴海燕)2, Xue-Fang Chen(陈雪芳)1,2, Hao-Jun Yang(杨浩军)2, Bin Zhao(赵斌)2, Miao He(何苗)1,3, Shu-Wen Zheng(郑树文)1, Shu-Ti Li(李述体)1
1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
2 Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 College of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006, China

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