Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (10): 107106    DOI: 10.1088/1674-1056/25/10/107106
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Modified model of gate leakage currents in AlGaN/GaN HEMTs
Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军)
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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