HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial

doi:10.1088/1674-1056/25/10/106803

Abstract

Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO₂ layer. Considering the good compatibility of HfO₂ with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology.

Keywords: modulation Hafnium oxide graphene

Received: 28 May 2016
Revised: 24 June 2016
Accepted manuscript online:

PACS:	68.65.Pq	(Graphene films)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	84.40.Lj	(Microwave integrated electronics)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

Corresponding Authors: Ran Jiang
E-mail: jiangran@sdu.edu.cn

Cite this article:

Ran Jiang(蒋然), Zheng-Ran Wu(吴正冉), Zu-Yin Han(韩祖银), Hyung-Suk Jung HfO₂-based ferroelectric modulator of terahertz waves with graphene metamaterial 2016 Chin. Phys. B 25 106803

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HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial

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HfO₂-based ferroelectric modulator of terahertz waves with graphene metamaterial