Self-compliance multilevel storage characteristic in HfO2-based device

doi:10.1088/1674-1056/25/10/106102

Abstract

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO₂-based memory device with Ag/HfO₂/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 10⁴ s, which may be useful for the applications in nonvolatile multilevel storage.

Keywords: resistive switching resistive random access memory multilevel self-compliance

Received: 14 May 2016
Revised: 06 June 2016
Accepted manuscript online:

PACS:	61.72.jd	(Vacancies)
	68.60.-p	(Physical properties of thin films, nonelectronic)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.40.Rw	(Metal-insulator-metal structures)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61664001, 61574070, and 61306148) and the Application Research and Development Plan of Gansu Academy of Sciences, China (Grant Nos. 2015JK-11 and 2015JK-01).

Corresponding Authors: Ying-Tao Li
E-mail: li_yt06@lzu.edu.cn

Cite this article:

Xiao-Ping Gao(高晓平), Li-Ping Fu(傅丽萍), Chuan-Bing Chen(陈传兵), Peng Yuan(袁鹏), Ying-Tao Li(李颖弢) Self-compliance multilevel storage characteristic in HfO₂-based device 2016 Chin. Phys. B 25 106102

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Self-compliance multilevel storage characteristic in HfO₂-based device