Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (8): 088505    DOI: 10.1088/1674-1056/25/8/088505
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Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer
Ping Qin(秦萍)1, Wei-Dong Song(宋伟东)1, Wen-Xiao Hu(胡文晓)1, Yuan-Wen Zhang(张苑文)1, Chong-Zhen Zhang(张崇臻)1, Ru-Peng Wang(王汝鹏)1, Liang-Liang Zhao(赵亮亮)1, Chao Xia(夏超)1, Song-Yang Yuan(袁松洋)1, Yi-an Yin(尹以安)1,2, Shu-Ti Li(李述体)1,2, Shi-Chen Su(宿世臣)1,2
1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
2 Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, Guangzhou 510631, China

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