Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (8): 088503    DOI: 10.1088/1674-1056/25/8/088503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Yu-Rong Liu(刘玉荣)1,2, Gao-Wei Zhao(赵高位)1, Pai-To Lai(黎沛涛)3, Ruo-He Yao(姚若河)1,2
1 The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
2 National Engineering Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China;
3 Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China

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