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Chin. Phys. B, 2016, Vol. 25(8): 088501    DOI: 10.1088/1674-1056/25/8/088501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Fabrication of Al/AlOx/Al junctions using pre-exposure technique at 30-keV e-beam voltage

Dong Lan(兰栋)1, Guangming Xue(薛光明)1, Qiang Liu(刘强)1, Xinsheng Tan(谭新生)1, Haifeng Yu(于海峰)1,2, Yang Yu(于扬)1,2
1 National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
2 Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
Abstract  

We fabricate high-quality Al/AlOx/Al junctions using improved bridge and bridge-free techniques at 30-keV e-beam voltage, in which the length of undercut and the size of junction can be well controlled by the pre-exposure technique. The dose window is 5 times as large as that used in the usual Dolan bridge technique, making this technique much more robust. Similar results, comparable with those achieved using a 100-keV e-beam writer, are obtained, which indicate that the 30-keV e-beam writer could be an economic choice for the superconducting qubit fabrication.

Keywords:  Josephson junction      pre-exposure      30-keV E-beam voltage      superconducting qubit  
Received:  23 February 2016      Revised:  07 April 2016      Accepted manuscript online: 
PACS:  85.25.Cp (Josephson devices)  
  03.67.Lx (Quantum computation architectures and implementations)  
  85.25.Am (Superconducting device characterization, design, and modeling)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 91321310, 11274156, 11474152, 11474153, 61521001, and 11504165) and the State Key Basic Research Program of China (Grant Nos. 2011CB922104 and 2011CBA00205).

Corresponding Authors:  Guangming Xue, Haifeng Yu     E-mail:  xuegm123@163.com;hfyu@nju.edu.cn

Cite this article: 

Dong Lan(兰栋), Guangming Xue(薛光明), Qiang Liu(刘强), Xinsheng Tan(谭新生), Haifeng Yu(于海峰), Yang Yu(于扬) Fabrication of Al/AlOx/Al junctions using pre-exposure technique at 30-keV e-beam voltage 2016 Chin. Phys. B 25 088501

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