Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2016, Vol. 25 Issue (8): 087308    DOI: 10.1088/1674-1056/25/8/087308
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate
Jia-Qi Zhang(张家琦)1,2, Lei Wang(王磊)1, Liu-An Li(李柳暗)3, Qing-Peng Wang(王青鹏)1,2, Ying Jiang(江滢)1,2, Hui-Chao Zhu(朱慧超)2, Jin-Ping Ao(敖金平)1
1 Institute of Technology and Science, Tokushima University, Tokushima, 770-8506, Japan;
2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, China;
3 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn