Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

doi:10.1088/1674-1056/25/8/087308

Abstract Self-aligned-gate heterostructure field-effect transistor (HFET) is fabricated using a wet-etching method. Titanium nitride (TiN) is one kind of thermal stable material which can be used as the gate electrode. A Ti/Au cap layer is fixed on the gate and acts as an etching mask. Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H₂O₂ solution at 95℃. After treating the ohmic region with an inductively coupled plasma (ICP) method, an Al layer is sputtered as an ohmic electrode. The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575℃ in N₂ ambient for 1 min. The TiN gate leakage current is only 10^-8 A after the low-temperature ohmic process. The access region length of the self-aligned-gate (SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET. The output current density and transconductance of the device which has the same gate length and width are also increased.

Keywords: AlGaN/GaN HFETs wet etching self-aligned-gate

Received: 26 February 2016
Revised: 16 April 2016
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	52.77.Bn	(Etching and cleaning)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Corresponding Authors: Jin-Ping Ao
E-mail: jpao@ee.tokushima-u.ac.jp

Cite this article:

Jia-Qi Zhang(张家琦), Lei Wang(王磊), Liu-An Li(李柳暗), Qing-Peng Wang(王青鹏), Ying Jiang(江滢), Hui-Chao Zhu(朱慧超), Jin-Ping Ao(敖金平) Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate 2016 Chin. Phys. B 25 087308

[1]	Christou A and Fantini F 2008 IEEE Trans. Dev. Mater. Rel. 8 239
[2]	Ao J P, Kikuta D, Kubota N, Naoi Y and Ohno Y 2003 IEEE Electron Dev. Lett. 24 500
[3]	Palacios T, Rajan S, Chakraborty A, Heikman S, Keller S, DenBaars S P and Mishra U K 2005 IEEE Trans. Electron Dev. 52 2117
[4]	Kumar V, Basu A, Kim D H and Adesida I 2008 Electron. Lett. 44 1323
[5]	Li L, Kishi A, Shiraishi T, Jiang Y, Wang Q and Ao J P 2013 Jpn. J. Appl. Phys. 52 11NH01
[6]	Li L, Nakamura R, Wang Q, Jiang Y and Ao J P 2014 Nanoscale Res. Lett. 9 590
[7]	Zhang J, Wang L, Wang Q, Jiang Y, Li L, Zhu H and Ao J P 2016 Semicond. Sci. Technol. 31 035015
[8]	Li L, Zhang J, Liu Y and Ao J P 2016 Chin. Phys. B 25 038503
[9]	Li L, Kishi A, Shiraishi T, Jiang Y, Wang Q and Ao J P 2014 J. Vac. Sci. Technol. 32 02B116
[10]	Ao J P, Naoi Y and Ohno Y 2013 Vaccum 87 150
[11]	Ao J P, Suzuki A, Sawada K, Shinkai S, Naoi Y and Ohno Y 2010 Vaccum 84 1439
[12]	Wang Q, Jiang Y, Miyashita T, Motoyama S, Li L, Wang D and Ao J P 2014 Solid-State Electron. 99 59

[1]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[2]	Wet etching and passivation of GaSb-based very long wavelength infrared detectors Xue-Yue Xu(许雪月), Jun-Kai Jiang(蒋俊锴), Wei-Qiang Chen(陈伟强), Su-Ning Cui(崔素宁), Wen-Guang Zhou(周文广), Nong Li(李农), Fa-Ran Chang(常发冉), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Dong-Wei Jiang(蒋洞微), Dong-Hai Wu(吴东海), Hong-Yue Hao(郝宏玥), and Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2022, 31(6): 068503.
[3]	Silica-based microcavity fabricated by wet etching H Long(龙浩), W Yang(杨文), L Y Ying(应磊莹), B P Zhang(张保平). Chin. Phys. B, 2017, 26(5): 054211.
[4]	Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰). Chin. Phys. B, 2017, 26(12): 127102.
[5]	Improvement in a-plane GaN crystalline quality using wet etching method Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Zhao Yi (赵一), Xue Jun-Shuai (薛军帅), Ha Wei (哈微), Zhang Shuai (张帅), Cui Pei-Shui (崔培水), Wen Hui-Juan (温慧娟), Chen Xing (陈兴). Chin. Phys. B, 2014, 23(4): 047804.
[6]	Rear-surface light intensification caused by Hertzian-conical crack in 355-nm silica optics Zhang Chun-Lai (章春来), Yuan Xiao-Dong (袁晓东), Xiang Xia (向霞), Wang Zhi-Guo (王治国), Liu Chun-Ming (刘春明), Li Li (李莉), He Shao-Bo (贺少勃), Zu Xiao-Tao (祖小涛). Chin. Phys. B, 2012, 21(9): 094213.
[7]	Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution Zhao Hua-Bo(赵华波), Ying Alex Yi-Qun(应轶群), Yan Feng(严峰), Wei Qin-Qin(魏芹芹), Fu Yun-Yi(傅云义), Zhang Yan(张岩), Li Yan(李彦), Wei Zi-Jun(魏子钧), and Zhang Zhao-Hui(张朝晖) . Chin. Phys. B, 2011, 20(10): 108103.
[8]	Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures Chang Yuan-Cheng (常远程), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明). Chin. Phys. B, 2006, 15(3): 636-640.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Cite this article:

Online attention