Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (8): 087306    DOI: 10.1088/1674-1056/25/8/087306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation
Hao Xu(徐昊), Hong Yang(杨红), Yan-Rong Wang(王艳蓉), Wen-Wu Wang(王文武), Wei-Chun Luo(罗维春), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春)
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics, Chinese Academy of Sciences, Beijing 100029, China

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