Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (7): 078502    DOI: 10.1088/1674-1056/25/7/078502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer
Yu Zhao(招瑜)1,2, Bingfeng Fan(范冰丰)1, Yiting Chen(陈义廷)1, Yi Zhuo(卓毅)1, Zhoujun Pang(庞洲骏)2, Zhen Liu(刘振)2, Gang Wang(王钢)1
1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;
2 School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China

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