Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (6): 066301    DOI: 10.1088/1674-1056/25/6/066301
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Bismuth-content-dependent polarized Raman spectrum of InPBi alloy
Guan-Nan Wei(魏冠男)1, Qing-Hai Tan(谭青海)1, Xing Dai(戴兴)1, Qi Feng(冯琦)1, Wen-Gang Luo(骆文刚)1, Yu Sheng(盛宇)1, Kai Wang(王凯)2, Wen-Wu Pan(潘文武)2, Li-Yao Zhang(张立瑶)2, Shu-Min Wang(王庶民)2, Kai-You Wang(王开友)1
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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