Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

doi:10.1088/1674-1056/25/6/067102

Abstract

A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated，in which polysilicon is sandwiched between oxide layers as a floating gate. Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed. The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing (P/E) operations at various P/E voltages are discussed. The simulated results show that present memory exhibits a large memory window of 57.5 V, and a high read current on/off ratio of ≈ 10³. Compared with the reported experimental results, these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects, which shows great promise in device designing and practical application.

Keywords: organic floating gate memory polysilicon floating gate programing and erasing operations device simulation

Received: 26 November 2015
Revised: 31 January 2016
Accepted manuscript online:

PACS:	71.15.-m	(Methods of electronic structure calculations)
	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	73.50.-h	(Electronic transport phenomena in thin films)
	74.20.Pq	(Electronic structure calculations)

Corresponding Authors: Jian-hong Yang
E-mail: yangjh@lzu.edu.cn

Cite this article:

Zhao-wen Yan(闫兆文), Jiao Wang(王娇), Jian-li Qiao(乔坚栗), Wen-jie Chen(谌文杰), Pan Yang(杨盼), Tong Xiao(肖彤), Jian-hong Yang(杨建红) Numerical simulation study of organic nonvolatile memory with polysilicon floating gate 2016 Chin. Phys. B 25 067102

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Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

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