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Chin. Phys. B, 2016, Vol. 25(5): 058106    DOI: 10.1088/1674-1056/25/5/058106
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Influences of different structures on the characteristics of H2O-based and O3-based LaxAlyO films deposited by atomic layer deposition

Chen-Xi Fei(费晨曦), Hong-Xia Liu(刘红侠), Xing Wang(汪星), Dong-Dong Zhao(赵冬冬), Shu-Long Wang(王树龙), Shu-Peng Chen(陈树鹏)
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  H2O-based and O3-based LaxAlyO nanolaminate films were deposited on Si substrates by atomic layer deposition (ALD). Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the LaxAlyO films were studied. Chemical bonds in the LaxAlyO films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy (XPS). The preliminary testing results indicate that the LaxAlyO films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness (EOT), electrical properties, and stability.
Keywords:  atomic layer deposition      oxidant      dielectric constant      equivalent oxide thickness  
Received:  05 November 2015      Revised:  14 January 2016      Accepted manuscript online: 
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  77.55.D-  
Fund: Project supported supported by the National Natural Science Foundation of China (Grant Nos. 61376099 and 61434007).
Corresponding Authors:  Hong-Xia Liu     E-mail:  hxliu@mail.xidian.edu.cn

Cite this article: 

Chen-Xi Fei(费晨曦), Hong-Xia Liu(刘红侠), Xing Wang(汪星), Dong-Dong Zhao(赵冬冬), Shu-Long Wang(王树龙), Shu-Peng Chen(陈树鹏) Influences of different structures on the characteristics of H2O-based and O3-based LaxAlyO films deposited by atomic layer deposition 2016 Chin. Phys. B 25 058106

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