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Chin. Phys. B, 2016, Vol. 25(5): 057702    DOI: 10.1088/1674-1056/25/5/057702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Distribution of electron traps in SiO2/HfO2 nMOSFET

Xiao-Hui Hou(侯晓慧)1, Xue-Feng Zheng(郑雪峰)2, Ao-Chen Wang(王奥琛)2, Ying-Zhe Wang(王颖哲)2, Hao-Yu Wen(文浩宇)2, Zhi-Jing Liu(刘志镜)1, Xiao-Wei Li(李小炜)2, Yin-He Wu(吴银河)2
1. School of Computer Science, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE~-1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices.
Keywords:  energy and spatial distribution      electron trap      HfO2  
Received:  12 January 2016      Revised:  31 January 2016      Accepted manuscript online: 
PACS:  77.55.D-  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.Ng (Insulators)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).
Corresponding Authors:  Xue-Feng Zheng     E-mail:  xfzheng@mail.xidian.edu.cn

Cite this article: 

Xiao-Hui Hou(侯晓慧), Xue-Feng Zheng(郑雪峰), Ao-Chen Wang(王奥琛), Ying-Zhe Wang(王颖哲), Hao-Yu Wen(文浩宇), Zhi-Jing Liu(刘志镜), Xiao-Wei Li(李小炜), Yin-He Wu(吴银河) Distribution of electron traps in SiO2/HfO2 nMOSFET 2016 Chin. Phys. B 25 057702

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