Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (5): 057306    DOI: 10.1088/1674-1056/25/5/057306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy
Chen-Fei Wu(武辰飞)1,2, Yun-Feng Chen(陈允峰)1,2, Hai Lu(陆海)1,2, Xiao-Ming Huang(黄晓明)3, Fang-Fang Ren(任芳芳)1,2, Dun-Jun Chen(陈敦军)1,2, Rong Zhang(张荣)1,2, You-Dou Zheng(郑有炓)1,2
1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
3. Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

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