Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (4): 048504    DOI: 10.1088/1674-1056/25/4/048504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
Yang Liu(刘阳)1, Chang-Chun Chai(柴常春)1, Yin-Tang Yang(杨银堂)1, Jing Sun(孙静)2, Zhi-Peng Li(李志鹏)2
1 Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
2 Space Payload System Innovation Center, China Academy of Space Technology, Xi'an 710100, China

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