Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (4): 048502    DOI: 10.1088/1674-1056/25/4/048502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer
Da Ma(马达)1, Xiao-Rong Luo(罗小蓉)1,2, Jie Wei(魏杰)1, Qiao Tan(谭桥)1, Kun Zhou(周坤)1, Jun-Feng Wu(吴俊峰)1
1 State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
2 Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

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