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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature |
| Liuan Li(李柳暗)1, Jiaqi Zhang(张家琦)2, Yang Liu(刘扬)1, Jin-Ping Ao(敖金平)2 |
1. School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China;
2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan |
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Abstract In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω· mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs.
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Received: 14 June 2015
Revised: 11 November 2015
Accepted manuscript online:
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.61.Ey
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(III-V semiconductors)
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81.15.Cd
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(Deposition by sputtering)
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| Fund: Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260). |
Corresponding Authors:
Yang Liu, Jin-Ping Ao
E-mail: liuy69@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
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Cite this article:
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平) Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature 2016 Chin. Phys. B 25 038503
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