Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (2): 027306    DOI: 10.1088/1674-1056/25/2/027306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
Yan-Hui Zhang(张彦辉)1, Jie Wei(魏杰)1, Chao Yin(尹超)1, Qiao Tan(谭桥)1, Jian-Ping Liu(刘建平)1, Peng-Cheng Li(李鹏程)1, Xiao-Rong Luo(罗小蓉)1,2
1. State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
2. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

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