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Chin. Phys. B, 2016, Vol. 25(2): 027701    DOI: 10.1088/1674-1056/25/2/027701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪)
School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D_it) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.
Keywords:  trap-assisted tunneling (TAT)      tunnel field-effect transistors (TFETs)      optical phonon scattering (OP)      acoustic phonon scattering (AP)  
Received:  07 July 2015      Revised:  03 November 2015      Accepted manuscript online: 
PACS:  77.22.Jp (Dielectric breakdown and space-charge effects)  
  77.55.df (For silicon electronics)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).
Corresponding Authors:  Zhi Jiang     E-mail:  zjiang@xidian.edu.cn

Cite this article: 

Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪) Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor 2016 Chin. Phys. B 25 027701

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